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MT6L77FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L77FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
0.10.05 1.00.05 0.80.05
Unit: mm
0.10.05 0.150.05
*
It exsels in the buffer and oscillation use.
0.35 0.35 1.00.05 0.70.05 1 2 3
+0.02 -0.04
Mounted Devices
Q1 Three-pin fSM mold products are corresponded MT3S11FS Q2 MT3S106FS
6 5 4 0.10.05
Absolute Maximum Ratings (Ta = 25C)
CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector power dissipation Junction temperature Storage temperature range SYMBOL VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg RATING Q1 13 6 1 40 10 100 110 (Note 2) 125 -55~125 Q2 13 6 1 80 20 UNIT V V V mA mA mW C C
0.48
1.COLLECTOR 1 2.EMITTER1 3.COLLECTOR2 4.BASE2 5.EMITTER2 6.BASE1
fS6 JEDEC JEITA TOSHIBA 2-1F1A
Weight : 0.001g (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : 1.0 cm2 x 1.0 mm (t) at the time of glass epoxy printed circuit board mounting. Note 2 : At the time of two-element operation
Note:
Marking (top view)
6 5 4
Pin Assignment (top view)
B1 E2 B2
54
1 2 3
Q1
Q2
C1
E1
C2
1
2007-11-01
MT6L77FS
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE Cre (Note) fT S21e (1) S21e (2) NF
2 2
CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz
MIN. 100 4 4
TYP. 0.65 6 3.5 6.5 2.4
MAX. 0.1 1 160 0.9 3.2
UNIT A A pF GHz dB dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE Cre (Note) fT S21e (1) S21e (2) NF
2 2
CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 10 mA VCE = 1 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz
MIN. 110 6.5 8.5
TYP. 0.5 8.5 8 10 1.2
MAX. 0.1 0.5 160 0.7 2
UNIT A A pF GHz dB dB
Note : Cre is measured by 3 terminal method capacitance bridge.
Caution
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle.
2
2007-11-01
MT6L77FS
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01

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